MG50Q2YS50 vs BSM50GB120DN2HOSA1 feature comparison

MG50Q2YS50 Toshiba America Electronic Components

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BSM50GB120DN2HOSA1 Infineon Technologies AG

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Pbfree Code No No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X7 MODULE-7
Pin Count 7 7
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Toshiba Infineon
Additional Feature HIGH SPEED
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 78 A 78 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7 R-XUFM-X7
Number of Elements 2 2
Number of Terminals 7 7
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 400 W
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 600 ns 450 ns
Turn-on Time-Nom (ton) 200 ns 100 ns
VCEsat-Max 3.6 V
Base Number Matches 2 1
Part Package Code MODULE
Factory Lead Time 4 Weeks

Compare MG50Q2YS50 with alternatives

Compare BSM50GB120DN2HOSA1 with alternatives