MG50Q2YS50
vs
BSM50GB120DN2HOSA1
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
Package Description |
FLANGE MOUNT, R-XUFM-X7
|
MODULE-7
|
Pin Count |
7
|
7
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Toshiba
|
Infineon
|
Additional Feature |
HIGH SPEED
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
78 A
|
78 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
300 ns
|
|
Gate-Emitter Thr Voltage-Max |
6 V
|
|
Gate-Emitter Voltage-Max |
20 V
|
|
JESD-30 Code |
R-XUFM-X7
|
R-XUFM-X7
|
Number of Elements |
2
|
2
|
Number of Terminals |
7
|
7
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
400 W
|
|
Power Dissipation-Max (Abs) |
400 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
MOTOR CONTROL
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
600 ns
|
450 ns
|
Turn-on Time-Nom (ton) |
200 ns
|
100 ns
|
VCEsat-Max |
3.6 V
|
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
MODULE
|
Factory Lead Time |
|
4 Weeks
|
|
|
|
Compare MG50Q2YS50 with alternatives
Compare BSM50GB120DN2HOSA1 with alternatives