MG25Q6ES42
vs
MG25Q6ES50
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
HIGH SPEED
|
HIGH SPEED SWITCHING
|
| Collector Current-Max (IC) |
25 A
|
35 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
500 ns
|
|
| JESD-30 Code |
R-PUFM-D17
|
R-PDIP-P24
|
| Number of Elements |
6
|
6
|
| Number of Terminals |
17
|
24
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
SOLDER LUG
|
PIN/PEG
|
| Terminal Position |
UPPER
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
POWER CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
4 V
|
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
| Turn-off Time-Nom (toff) |
|
600 ns
|
| Turn-on Time-Nom (ton) |
|
200 ns
|
|
|
|
Compare MG25Q6ES42 with alternatives
Compare MG25Q6ES50 with alternatives