MFM8126S-12E vs AS29F010CW-120/Q feature comparison

MFM8126S-12E Mosaic Semiconductor Inc

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AS29F010CW-120/Q Micross Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOSAIC SEMICONDUCTOR INC MICROSS COMPONENTS
Part Package Code DIP DIP
Package Description 0.600 INCH, CERAMIC, DIP-32 DIP, DIP32,.6
Pin Count 32 32
Reach Compliance Code unknown compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 120 ns 120 ns
JESD-30 Code R-CDIP-T32 R-CDIP-T32
Memory Density 1048576 bit 1048576 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Type NOR TYPE NOR TYPE
Base Number Matches 2 1
Rohs Code No
Command User Interface YES
Data Polling YES
Endurance 1000000 Write/Erase Cycles
Length 41.7322 mm
Number of Sectors/Size 8
Package Code DIP
Package Equivalence Code DIP32,.6
Peak Reflow Temperature (Cel) NOT SPECIFIED
Screening Level MIL-PRF-38535 Class Q
Seated Height-Max 5.1308 mm
Sector Size 16K
Standby Current-Max 0.0016 A
Supply Current-Max 0.05 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Terminal Pitch 2.54 mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit YES
Width 15.24 mm

Compare MFM8126S-12E with alternatives

Compare AS29F010CW-120/Q with alternatives