MF81M1-GBDAT01
vs
HWB101{PCMCIA}4{WIDE-TEMP}
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
SEIKO EPSON CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
200 ns
200 ns
Alternate Memory Width
8
JESD-30 Code
X-XXMA-X68
X-XXMA-X68
Memory Density
8388608 bit
8388608 bit
Memory IC Type
FLASH CARD
FLASH CARD
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
68
68
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
55 °C
70 °C
Operating Temperature-Min
-20 °C
Organization
512KX16
512KX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
UNSPECIFIED
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Programming Voltage
12 V
12 V
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
MOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UNSPECIFIED
UNSPECIFIED
Type
NOR TYPE
NOR TYPE
Base Number Matches
1
1
Package Description
,
Category CO2 Kg
12
Compliance Temperature Grade
Commercial Extended: -20C to +70C
Additional Feature
HARDWARE WRITE PROTECT; 10K ERASE/WRITE CYCLES MIN
Compare MF81M1-GBDAT01 with alternatives
Compare HWB101{PCMCIA}4{WIDE-TEMP} with alternatives