MEM832JM-150
vs
CAT28C256N-15TE7
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOSAIC SEMICONDUCTOR INC
|
CATALYST SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
150 ns
|
150 ns
|
| Additional Feature |
PAGE WRITE
|
|
| JESD-30 Code |
R-CQCC-J32
|
R-PQCC-J32
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
5 V
|
5 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Position |
QUAD
|
QUAD
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
QFJ
|
| Package Description |
|
QCCJ,
|
| Pin Count |
|
32
|
| JESD-609 Code |
|
e0
|
| Length |
|
13.97 mm
|
| Moisture Sensitivity Level |
|
3
|
| Output Characteristics |
|
3-STATE
|
| Package Code |
|
QCCJ
|
| Seated Height-Max |
|
3.55 mm
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Pitch |
|
1.27 mm
|
| Width |
|
11.43 mm
|
|
|
|
Compare MEM832JM-150 with alternatives
Compare CAT28C256N-15TE7 with alternatives