MEM5116D2DABG-18 vs MT47H32M16HR-187EL:G feature comparison

MEM5116D2DABG-18 Memphis Electronic AG

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MT47H32M16HR-187EL:G Micron Technology Inc

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer MEMPHIS ELECTRONIC AG MICRON TECHNOLOGY INC
Package Description TFBGA, TFBGA,
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Category CO2 Kg 12 12
EU RoHS Version RoHS 2 (2015/863/EU)
Candidate List Date 2022-01-17
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.35 ns 0.35 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 12.5 mm 12.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm 8 mm
Base Number Matches 1 1
Compliance Temperature Grade Commercial Extended: +0C to +85C
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V5.12
Operating Temperature-Max 85 °C
Operating Temperature-Min
Temperature Grade OTHER

Compare MEM5116D2DABG-18 with alternatives

Compare MT47H32M16HR-187EL:G with alternatives