MDU1514URH
vs
NTB75N03-06
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MAGNACHIP SEMICONDUCTOR LTD
|
ON SEMICONDUCTOR
|
| Package Description |
SMALL OUTLINE, R-PDSO-F5
|
CASE 418AA-01, D2PAK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
79 mJ
|
1500 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
66.3 A
|
75 A
|
| Drain-source On Resistance-Max |
0.006 Ω
|
0.0065 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-F5
|
R-PDSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
100 A
|
225 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
6
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE 418AA-01
|
| Additional Feature |
|
AVALANCHE RATED
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare MDU1514URH with alternatives
Compare NTB75N03-06 with alternatives