MDM11000TMB-12
vs
MDM11000TI-12
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOSAIC SEMICONDUCTOR INC
MOSAIC SEMICONDUCTOR INC
Package Description
,
,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Mode
FAST PAGE
FAST PAGE
Access Time-Max
120 ns
120 ns
Additional Feature
RAS/CBR/HIDDEN REFRESH
RAS/CBR/HIDDEN REFRESH
JESD-30 Code
R-CDIP-T18
R-CDIP-T18
Memory Density
1048576 bit
1048576 bit
Memory IC Type
FAST PAGE DRAM
FAST PAGE DRAM
Memory Width
1
1
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
18
18
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Organization
1MX1
1MX1
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
512
512
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
INDUSTRIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Compare MDM11000TMB-12 with alternatives
Compare MDM11000TI-12 with alternatives