MDM11000TM-10
vs
SMJ4C1024-10JD
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOSAIC SEMICONDUCTOR INC
|
TEXAS INSTRUMENTS INC
|
| Package Description |
,
|
DIP,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
FAST PAGE
|
FAST PAGE
|
| Access Time-Max |
100 ns
|
100 ns
|
| Additional Feature |
RAS/CBR/HIDDEN REFRESH
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
| JESD-30 Code |
R-CDIP-T18
|
R-CDIP-T18
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
FAST PAGE DRAM
|
FAST PAGE DRAM
|
| Memory Width |
1
|
1
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
18
|
18
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
1MX1
|
1MX1
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
512
|
512
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
18
|
| Length |
|
22.606 mm
|
| Output Characteristics |
|
3-STATE
|
| Package Code |
|
DIP
|
| Seated Height-Max |
|
4.45 mm
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
7.62 mm
|
|
|
|
Compare MDM11000TM-10 with alternatives
Compare SMJ4C1024-10JD with alternatives