MCM67M618AFN9 vs KM718BV86J-12 feature comparison

MCM67M618AFN9 NXP Semiconductors

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KM718BV86J-12 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SAMSUNG SEMICONDUCTOR INC
Package Description QCCJ, QCCJ,
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 9 ns 12 ns
JESD-30 Code S-PQCC-J52 S-PQCC-J52
Length 19.125 mm 19.05 mm
Memory Density 1179648 bit 1179648 bit
Memory IC Type CACHE SRAM STANDARD SRAM
Memory Width 18 18
Number of Functions 1 1
Number of Terminals 52 52
Number of Words 65536 words 65536 words
Number of Words Code 64000 64000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64KX18 64KX18
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code QCCJ QCCJ
Package Shape SQUARE SQUARE
Package Style CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Seated Height-Max 4.57 mm 4.52 mm
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V
Supply Voltage-Nom (Vsup) 5 V 3.3 V
Surface Mount YES YES
Technology BICMOS BICMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position QUAD QUAD
Width 19.125 mm 19.05 mm
Base Number Matches 4 1
Part Package Code LCC
Pin Count 52
Qualification Status Not Qualified

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