MC-458CB641XS-A10 vs THLY64N11A80 feature comparison

MC-458CB641XS-A10 Elpida Memory Inc

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THLY64N11A80 Toshiba America Electronic Components

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ELPIDA MEMORY INC TOSHIBA CORP
Part Package Code MODULE DIMM
Package Description DIMM, DIMM144,32 DIMM, DIMM144,32
Pin Count 144 144
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 6 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz 125 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N144 R-XDMA-N144
Memory Density 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 144 144
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 8MX64 8MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM144,32 DIMM144,32
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 25.4 mm 25.4 mm
Self Refresh YES YES
Standby Current-Max 0.004 A 0.004 A
Supply Current-Max 0.92 mA 0.6 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2

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