MC-4516CD646F-A10 vs WED3DG6419V7D2 feature comparison

MC-4516CD646F-A10 NEC Electronics Group

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WED3DG6419V7D2 Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEC ELECTRONICS CORP MICROSEMI CORP
Part Package Code DIMM DIMM
Package Description , DIMM,
Pin Count 168 168
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 6 ns
JESD-30 Code R-XDMA-N168 R-XDMA-N168
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 168 168
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 16MX64 16MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology MOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code No
Rohs Code No
Additional Feature AUTO/SELF REFRESH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Self Refresh YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MC-4516CD646F-A10 with alternatives

Compare WED3DG6419V7D2 with alternatives