MBRD660CTTR-A
vs
NRVBD660CTRLG
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
ON SEMICONDUCTOR
|
| Package Description |
R-PSSO-G2
|
DPAK-3/2
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE
|
FREE WHEELING DIODE
|
| Application |
GENERAL PURPOSE
|
FAST RECOVERY POWER
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.9 V
|
0.9 V
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Non-rep Pk Forward Current-Max |
75 A
|
75 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
60 V
|
60 V
|
| Reverse Current-Max |
100 µA
|
100 µA
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
onsemi
|
| Breakdown Voltage-Min |
|
60 V
|
| JEDEC-95 Code |
|
TO-252AA
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reverse Test Voltage |
|
60 V
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare MBRD660CTTR-A with alternatives
Compare NRVBD660CTRLG with alternatives