MBRA130LT3
vs
1N4936-G
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
R-PDSO-J2
|
O-PALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE
|
HIGH RELIABILITY
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.47 V
|
1.2 V
|
| JESD-30 Code |
R-PDSO-C2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30 V
|
400 V
|
| Reverse Current-Max |
1000 µA
|
|
| Reverse Test Voltage |
30 V
|
|
| Surface Mount |
YES
|
NO
|
| Technology |
SCHOTTKY
|
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Base Number Matches |
1
|
3
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
DO-41
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-41
|
| Moisture Sensitivity Level |
|
1
|
| Reverse Recovery Time-Max |
|
0.2 µs
|
|
|
|
Compare MBRA130LT3 with alternatives
Compare 1N4936-G with alternatives