MBR5200VP-G1
vs
MBR5200VP-E1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
DIODES INC
DIODES INC
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2016-09-20
2016-09-20
Samacsys Manufacturer
Diodes Incorporated
Diodes Incorporated
Additional Feature
LOW NOISE
LOW NOISE
Application
HIGH VOLTAGE POWER
HIGH VOLTAGE POWER
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.95 V
0.95 V
JEDEC-95 Code
DO-27
DO-27
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
5 A
5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
500 µA
500 µA
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Compare MBR5200VP-G1 with alternatives
Compare MBR5200VP-E1 with alternatives