MBR3200G-SMC-R vs ES3DB-AM4G feature comparison

MBR3200G-SMC-R Unisonic Technologies Co Ltd

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ES3DB-AM4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description SMC, 2 PIN SMB, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE
Application EFFICIENCY SUPER FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.95 V
JEDEC-95 Code DO-214AB DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Pk Forward Current-Max 80 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 50 µA 5 µA
Reverse Test Voltage 200 V
Surface Mount YES YES
Technology SCHOTTKY
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Date Of Intro 2019-05-21
JESD-609 Code e3
Moisture Sensitivity Level 1
Reverse Recovery Time-Max 0.035 µs
Terminal Finish MATTE TIN

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