MBR3100
vs
MR851-G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
DIODES INC
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Application |
GENERAL PURPOSE
|
EFFICIENCY
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.725 V
|
|
| Non-rep Pk Forward Current-Max |
105 A
|
150 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Output Current-Max |
3 A
|
3 A
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Technology |
SCHOTTKY
|
|
| Base Number Matches |
11
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
O-PALF-W2
|
| Additional Feature |
|
LOW POWER LOSS
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-201AD
|
| JESD-30 Code |
|
O-PALF-W2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Not Qualified
|
| Reverse Recovery Time-Max |
|
0.1 µs
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
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