MBR20H200CTC0G vs MBR20H200CT feature comparison

MBR20H200CTC0G Taiwan Semiconductor

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MBR20H200CT EIC Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD EIC SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Case Connection CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.97 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Non-rep Pk Forward Current-Max 150 A
Number of Elements 2
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 10 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V
Reverse Current-Max 5 µA
Surface Mount NO
Technology SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 2

Compare MBR20H200CTC0G with alternatives

Compare MBR20H200CT with alternatives