MBR2045CTHC0 vs MBR2045CTG feature comparison

MBR2045CTHC0 Taiwan Semiconductor

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MBR2045CTG Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.84 V 0.65 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 10 A 10 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101 MIL-STD-202
Rep Pk Reverse Voltage-Max 45 V 45 V
Reverse Current-Max 100 µA 100 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 3
Breakdown Voltage-Min 45 V
Reverse Test Voltage 45 V

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