MBR180 vs BT134W-600 feature comparison

MBR180 PanJit Semiconductor

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BT134W-600 NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer PAN JIT INTERNATIONAL INC NXP SEMICONDUCTORS
Part Package Code DO-41
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2 SMALL OUTLINE, R-PDSO-G4
Pin Count 2 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.30.00.80
Samacsys Manufacturer PANJIT
Additional Feature FREE WHEELING DIODE
Application GENERAL PURPOSE
Case Connection ISOLATED MAIN TERMINAL 2
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 R-PDSO-G4
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 4
Operating Temperature-Max 175 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V
Surface Mount NO YES
Technology SCHOTTKY
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 5 3
Critical Rate of Rise of Commutation Voltage-Min 10 V/us
Critical Rate of Rise of Off-State Voltage-Min 100 V/us
DC Gate Trigger Current-Max 35 mA
DC Gate Trigger Voltage-Max 1.5 V
Holding Current-Max 15 mA
JESD-609 Code e3
Leakage Current-Max 0.5 mA
Moisture Sensitivity Level 1
RMS On-state Current-Max 1 A
Repetitive Peak Off-state Leakage Current-Max 500 µA
Repetitive Peak Off-state Voltage 600 V
Terminal Finish TIN
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC

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Compare BT134W-600 with alternatives