MBR150 vs 1N4001S-GT3 feature comparison

MBR150 Galaxy Microelectronics

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1N4001S-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.65 V
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Technology SCHOTTKY
Base Number Matches 14 2
Package Description O-PALF-W2
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Terminal Form WIRE
Terminal Position AXIAL

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