MBR10H150CTH
vs
MBR10150CT-Y
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
not_compliant
Additional Feature
LOW POWER LOSS
LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Configuration
COMMON CATHODE, 2 ELEMENTS
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.97 V
0.98 V
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
120 A
120 A
Number of Elements
2
2
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
5 A
5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
150 V
150 V
Reverse Current-Max
5 µA
100 µA
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
3
Moisture Sensitivity Level
1