MBR1060HC0
vs
MBR1060-H
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
FORMOSA MICROSEMI CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
LOW POWER LOSS
LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.8 V
0.8 V
JEDEC-95 Code
TO-220AC
TO-220AC
JESD-30 Code
R-PSFM-T2
R-PSFM-T2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
10 A
10 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
260
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
60 V
60 V
Reverse Current-Max
100 µA
100 µA
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
1
1
Compare MBR1060HC0 with alternatives
Compare MBR1060-H with alternatives