MBR1060HC0 vs MBR1060-H feature comparison

MBR1060HC0 Taiwan Semiconductor

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MBR1060-H Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V 0.8 V
JEDEC-95 Code TO-220AC TO-220AC
JESD-30 Code R-PSFM-T2 R-PSFM-T2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 10 A 10 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 60 V 60 V
Reverse Current-Max 100 µA 100 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 1 1

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