MBR1060D0G vs MBR1060-H feature comparison

MBR1060D0G Taiwan Semiconductor

Buy Now Datasheet

MBR1060-H Formosa Microsemi Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V 0.8 V
JEDEC-95 Code TO-220AC TO-220AC
JESD-30 Code R-PSFM-T2 R-PSFM-T2
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 10 A 10 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Rep Pk Reverse Voltage-Max 60 V 60 V
Reverse Current-Max 100 µA 100 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish PURE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Rohs Code Yes
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare MBR1060D0G with alternatives

Compare MBR1060-H with alternatives