MBM29DL322BD12PBT
vs
MBM29DL322BD80PBT
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
FUJITSU SEMICONDUCTOR AMERICA INC
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
| Package Description |
TFBGA,
|
TFBGA,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
120 ns
|
80 ns
|
| Alternate Memory Width |
8
|
8
|
| Boot Block |
BOTTOM
|
BOTTOM
|
| JESD-30 Code |
R-PBGA-B57
|
R-PBGA-B57
|
| Length |
13.95 mm
|
13.95 mm
|
| Memory Density |
33554432 bit
|
33554432 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
57
|
57
|
| Number of Words |
2097152 words
|
2097152 words
|
| Number of Words Code |
2000000
|
2000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
-20 °C
|
| Organization |
2MX16
|
2MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Type |
NOR TYPE
|
NOR TYPE
|
| Width |
7.95 mm
|
7.95 mm
|
| Base Number Matches |
3
|
3
|
| Part Package Code |
|
BGA
|
| Pin Count |
|
57
|
|
|
|
Compare MBM29DL322BD80PBT with alternatives