MB8508S064AG-100LDG
vs
KMM366F883BK3-6
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FUJITSU LTD
SAMSUNG SEMICONDUCTOR INC
Package Description
,
,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Access Mode
SINGLE BANK PAGE BURST
FAST PAGE WITH EDO
Access Time-Max
8.5 ns
60 ns
Additional Feature
AUTO/SELF REFRESH
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code
R-PDMA-N168
R-XDMA-N168
Memory Density
536870912 bit
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
EDO DRAM MODULE
Memory Width
64
64
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
168
168
Number of Words
8388608 words
8388608 words
Number of Words Code
8000000
8000000
Operating Mode
SYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
8MX64
8MX64
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Not Qualified
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
3 V
3 V
Supply Voltage-Nom (Vsup)
3.3 V
3.3 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
NO LEAD
NO LEAD
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Compare MB8508S064AG-100LDG with alternatives
Compare KMM366F883BK3-6 with alternatives