MB84VD21182EM-70PBS
vs
MB84VD21194EM-70PBS-E1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
SPANSION INC
Reach Compliance Code
compliant
compliant
Access Time-Max
70 ns
JESD-30 Code
S-PBGA-B56
R-PBGA-B56
Memory IC Type
MEMORY CIRCUIT
MEMORY CIRCUIT
Mixed Memory Type
FLASH+SRAM
Number of Terminals
56
56
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
FBGA
TFBGA
Package Equivalence Code
BGA56,8X8,32
Package Shape
SQUARE
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies
3 V
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.000005 A
Supply Current-Max
0.05 mA
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
4
1
Rohs Code
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
56
ECCN Code
EAR99
HTS Code
8542.32.00.71
Additional Feature
SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8
JESD-609 Code
e1
Length
7.2 mm
Memory Density
16777216 bit
Memory Width
16
Number of Functions
1
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
ASYNCHRONOUS
Organization
1MX16
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
3.3 V
Supply Voltage-Min (Vsup)
2.7 V
Terminal Finish
TIN SILVER COPPER
Width
7 mm
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