MB84VA2104-10
vs
M36W108AB120ZM1T
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
Ihs Manufacturer |
FUJITSU LTD
|
NUMONYX
|
Package Description |
LBGA, BGA48,6X8,40
|
LBGA,
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Access Time-Max |
100 ns
|
|
Additional Feature |
SRAM IS ORGANISED AS 256K X 8
|
ALSO CONTAINS 128K X 8 SRAM
|
JESD-30 Code |
R-PBGA-B48
|
R-PBGA-B48
|
JESD-609 Code |
e0
|
|
Length |
14 mm
|
11.8 mm
|
Memory Density |
16777216 bit
|
8388608 bit
|
Memory IC Type |
MEMORY CIRCUIT
|
MEMORY CIRCUIT
|
Memory Width |
8
|
8
|
Mixed Memory Type |
FLASH+SRAM
|
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
2097152 words
|
1048576 words
|
Number of Words Code |
2000000
|
1000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-20 °C
|
|
Organization |
2MX8
|
1MX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Equivalence Code |
BGA48,6X8,40
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.6 mm
|
1.35 mm
|
Standby Current-Max |
0.00003 A
|
|
Supply Current-Max |
0.04 mA
|
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
COMMERCIAL
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
10 mm
|
9.8 mm
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
BGA
|
Pin Count |
|
48
|
|
|
|
Compare MB84VA2104-10 with alternatives
Compare M36W108AB120ZM1T with alternatives