MB82DP04183C-65LWFKT
vs
MB82DP04184E-65LWT
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FUJITSU LTD
|
FUJITSU LTD
|
| Package Description |
DIE, WAFER
|
DIE,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
65 ns
|
65 ns
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
X-XUUC-N
|
X-XUUC-N
|
| Length |
11 mm
|
11 mm
|
| Memory Density |
67108864 bit
|
67108864 bit
|
| Memory IC Type |
PSEUDO STATIC RAM
|
PSEUDO STATIC RAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
71
|
71
|
| Number of Words |
4194304 words
|
4194304 words
|
| Number of Words Code |
4000000
|
4000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-30 °C
|
-30 °C
|
| Organization |
4MX16
|
4MX16
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIE
|
DIE
|
| Package Equivalence Code |
WAFER
|
|
| Package Shape |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Standby Current-Max |
0.00001 A
|
|
| Supply Current-Max |
0.04 mA
|
|
| Supply Voltage-Max (Vsup) |
3.1 V
|
3.1 V
|
| Supply Voltage-Min (Vsup) |
2.6 V
|
2.6 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
7 mm
|
7 mm
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
WAFER
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|