MB82D01161-85PBT vs K6F1616R6M-EF85 feature comparison

MB82D01161-85PBT FUJITSU Semiconductor Limited

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K6F1616R6M-EF85 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description 0.80 MM PITCH, PLASTIC, FBGA-48 VFBGA,
Pin Count 48 48
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 85 ns 85 ns
JESD-30 Code R-PBGA-B48 R-PBGA-B48
Length 9 mm 12 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -30 °C -40 °C
Organization 1MX16 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1 mm
Supply Voltage-Max (Vsup) 2.7 V 2.2 V
Supply Voltage-Min (Vsup) 2.3 V 1.65 V
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 6 mm 9 mm
Base Number Matches 2 1

Compare MB82D01161-85PBT with alternatives

Compare K6F1616R6M-EF85 with alternatives