MB811643222A-125FN vs K4S643234E-TE100 feature comparison

MB811643222A-125FN FUJITSU Semiconductor Limited

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K4S643234E-TE100 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC SAMSUNG SEMICONDUCTOR INC
Package Description TSOP2, TSOP2,
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G86 R-PDSO-G86
Length 22.22 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 86 86
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 2MX32 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 3.6 V 3.3 V
Supply Voltage-Min (Vsup) 3 V 2.3 V
Supply Voltage-Nom (Vsup) 3.3 V 2.5 V
Surface Mount YES YES
Technology MOS CMOS
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Width 10.16 mm 10.16 mm
Base Number Matches 2 1
Rohs Code No
Part Package Code TSOP2
Pin Count 86
Access Time-Max 6 ns
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Peak Reflow Temperature (Cel) 240
Temperature Grade OTHER
Time@Peak Reflow Temperature-Max (s) 30

Compare MB811643222A-125FN with alternatives

Compare K4S643234E-TE100 with alternatives