MB2S-G vs S1ZB10-4062 feature comparison

MB2S-G Sangdest Microelectronics (Nanjing) Co Ltd

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S1ZB10-4062 Shindengen Electronic Manufacturing Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Package Description R-PDSO-G4 R-PDSO-G4
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 200 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.05 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 0.5 A 0.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 200 V 100 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Pin Count 4
ECCN Code EAR99
HTS Code 8541.10.00.70
Operating Temperature-Max 150 °C
Reverse Current-Max 0.00001 µA

Compare MB2S-G with alternatives

Compare S1ZB10-4062 with alternatives