MAUPTB28 vs MXUPTB28TR13 feature comparison

MAUPTB28 Microsemi Corporation

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MXUPTB28TR13 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 31 V 31 V
Clamping Voltage-Max 47.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code S-PSSO-G1 R-PDSO-G1
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1000 W 150 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 28 V 28 V
Reverse Current-Max 1 µA
Reverse Test Voltage 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Base Number Matches 2 1
Part Package Code DO-216AA
Package Description R-PDSO-G1
Pin Count 2
Additional Feature LOW LEAKAGE CURRENT
Case Connection ANODE
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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