MASMLJ8.5A vs 3.0SMCJ8.5-GT3 feature comparison

MASMLJ8.5A Microchip Technology Inc

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3.0SMCJ8.5-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 10.4 V 11.92 V
Breakdown Voltage-Min 9.44 V 9.44 V
Breakdown Voltage-Nom 9.92 V
Clamping Voltage-Max 14.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Package Description R-PDSO-C2

Compare MASMLJ8.5A with alternatives

Compare 3.0SMCJ8.5-GT3 with alternatives