MASMLJ51CAE3
vs
SMLJ51C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY
LOW INDUCTANCE
Breakdown Voltage-Max
62.7 V
69.3 V
Breakdown Voltage-Min
56.7 V
56.7 V
Breakdown Voltage-Nom
59.7 V
63 V
Clamping Voltage-Max
82.4 V
91.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.61 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
4
Package Description
R-PDSO-C2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Reverse Current-Max
5 µA
Compare MASMLJ51CAE3 with alternatives
Compare SMLJ51C with alternatives