MASMLJ100ATR vs SMDJ100AHV7G feature comparison

MASMLJ100ATR Microsemi Corporation

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SMDJ100AHV7G Taiwan Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 123 V 123 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V 117 V
Clamping Voltage-Max 162 V 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Forward Voltage-Max (VF) 5 V
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Reverse Test Voltage 100 V
Time@Peak Reflow Temperature-Max (s) 30

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