MASMLJ100A
vs
SMDJ100A/TR13
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
YAGEO CORP
Reach Compliance Code
compliant
compliant
Factory Lead Time
40 Weeks
18 Weeks
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
123 V
123 V
Breakdown Voltage-Min
111 V
111 V
Breakdown Voltage-Nom
117 V
117 V
Clamping Voltage-Max
162 V
162 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.61 W
6.5 W
Qualification Status
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Date Of Intro
2019-04-29
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
2 µA
Reverse Test Voltage
100 V
Time@Peak Reflow Temperature-Max (s)
40
Compare MASMLJ100A with alternatives
Compare SMDJ100A/TR13 with alternatives