MASMLG58
vs
SMLG58
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
INTERNATIONAL SEMICONDUCTOR INC
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
R-PDSO-G2
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
78.7 V
78.7 V
Breakdown Voltage-Min
64.4 V
64.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.61 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Additional Feature
LOW INDUCTANCE
Breakdown Voltage-Nom
71.6 V
Clamping Voltage-Max
103 V
Reverse Current-Max
5 µA
Compare MASMLG58 with alternatives
Compare SMLG58 with alternatives