MASMLG12AE3/TR vs MXSMLG12AE3 feature comparison

MASMLG12AE3/TR Microsemi Corporation

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MXSMLG12AE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 14.7 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14 V 14 V
Clamping Voltage-Max 19.9 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code DO-215AB
Pin Count 2
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500

Compare MASMLG12AE3/TR with alternatives

Compare MXSMLG12AE3 with alternatives