MASMCJLCE9.0AE3
vs
SMCJ9.0AM6
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-2
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
Breakdown Voltage-Max
11.1 V
11.1 V
Breakdown Voltage-Min
10 V
10 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500
AEC-Q101
Rep Pk Reverse Voltage-Max
9 V
9 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
4
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
10.55 V
Clamping Voltage-Max
15.4 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare MASMCJLCE9.0AE3 with alternatives
Compare SMCJ9.0AM6 with alternatives