MASMCGLCE60A
vs
MASMCGLCE58AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Package Description
PLASTIC PACKAGE-2
R-PDSO-G2
Reach Compliance Code
compliant
compliant
Factory Lead Time
40 Weeks
Breakdown Voltage-Max
73.7 V
71.2 V
Breakdown Voltage-Min
66.7 V
64.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-215AB
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
60 V
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Part Package Code
DO-215AB
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
67.8 V
Clamping Voltage-Max
93.6 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MASMCGLCE60A with alternatives
Compare MASMCGLCE58AE3TR with alternatives