MASMCGLCE45AE3TR vs MSMCGLCE43AE3 feature comparison

MASMCGLCE45AE3TR Microsemi Corporation

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MSMCGLCE43AE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-215AB
Package Description R-PDSO-G2 SMCG, 2 PIN
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 55.3 V 52.8 V
Breakdown Voltage-Min 50 V 47.8 V
Breakdown Voltage-Nom 52.65 V 50.3 V
Clamping Voltage-Max 72.7 V 69.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 45 V 43 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Factory Lead Time 40 Weeks
Diode Capacitance-Min 100 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reference Standard IEC-61000-4-2, 4-4, 4-5
Reverse Current-Max 5 µA
Reverse Test Voltage 43 V
Terminal Finish MATTE TIN

Compare MASMCGLCE45AE3TR with alternatives

Compare MSMCGLCE43AE3 with alternatives