MASMBJP6KE82CE3 vs MSPSMBJ64CE3 feature comparison

MASMBJP6KE82CE3 Microsemi Corporation

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MSPSMBJ64CE3 Microsemi Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 90.2 V 86.9 V
Breakdown Voltage-Min 73.8 V 71.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 66.4 V 64 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Part Package Code DO-214AA
Pin Count 2
Breakdown Voltage-Nom 79 V
Clamping Voltage-Max 114 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reference Standard MIL-19500
Terminal Finish MATTE TIN

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