MASMBJP6KE82AE3TR
vs
MASMBJP6KE82A
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Part Package Code |
DO-214AA
|
DO-214AA
|
Package Description |
R-PDSO-C2
|
R-PDSO-C2
|
Pin Count |
2
|
2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
TR, 7 INCH: 750
|
|
Breakdown Voltage-Max |
86.1 V
|
86.1 V
|
Breakdown Voltage-Min |
77.9 V
|
77.9 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1.38 W
|
1.38 W
|
Rep Pk Reverse Voltage-Max |
70.1 V
|
70.1 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
JESD-609 Code |
|
e0
|
Moisture Sensitivity Level |
|
1
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare MASMBJP6KE82AE3TR with alternatives
Compare MASMBJP6KE82A with alternatives