MASMBJP6KE6.8CE3 vs MASMBGP6KE6.8CE3TR feature comparison

MASMBJP6KE6.8CE3 Microsemi Corporation

Buy Now Datasheet

MASMBGP6KE6.8CE3TR Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 7.48 V 7.48 V
Breakdown Voltage-Min 6.12 V 6.12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-215AA
JESD-30 Code R-PDSO-C2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 5.5 V 5.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Part Package Code DO-215AA
Pin Count 2
Additional Feature TR, 7 INCH: 750

Compare MASMBJP6KE6.8CE3 with alternatives

Compare MASMBGP6KE6.8CE3TR with alternatives