MASMBJP6KE51E3 vs MQSMBJ40TR feature comparison

MASMBJP6KE51E3 Microsemi Corporation

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MQSMBJ40TR Microsemi Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-C2 PLASTIC PACKAGE-2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Category CO2 Kg 8.54 8.54
Compliance Temperature Grade Military: -65C to +150C Military: -65C to +150C
Candidate List Date 2017-07-07
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V5.10
Breakdown Voltage-Max 56.1 V 54.3 V
Breakdown Voltage-Min 45.9 V 44.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 41.3 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Part Package Code DO-214AA
Pin Count 2
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Nom 49.35 V
Clamping Voltage-Max 71.4 V
JESD-609 Code e0
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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