MASMBJ90E3
vs
TZB68A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SEMICON COMPONENTS INC
Part Package Code
DO-214AA
Package Description
R-PDSO-J2
O-XALF-W2
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
122 V
74.8 V
Breakdown Voltage-Min
100 V
61.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-J2
O-XALF-W2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
1 W
Rep Pk Reverse Voltage-Max
90 V
55 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
J BEND
WIRE
Terminal Position
DUAL
AXIAL
Base Number Matches
1
1
Breakdown Voltage-Nom
68 V
Case Connection
ISOLATED
Clamping Voltage-Max
98 V
Qualification Status
Not Qualified
Reverse Current-Max
2 µA
Compare MASMBJ90E3 with alternatives
Compare TZB68A with alternatives