MASMBJ8.0E3 vs MSPSMBG8.0E3TR feature comparison

MASMBJ8.0E3 Microsemi Corporation

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MSPSMBG8.0E3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AA DO-215AA
Package Description R-PDSO-J2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.9 V 10.9 V
Breakdown Voltage-Min 8.89 V 8.89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-215AA
JESD-30 Code R-PDSO-J2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form J BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Nom 9.9 V
Clamping Voltage-Max 15 V
Qualification Status Not Qualified
Reference Standard MIL-19500

Compare MASMBJ8.0E3 with alternatives

Compare MSPSMBG8.0E3TR with alternatives