MASMBJ28A
vs
SMBJ28AHM4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMBJ, 2 PIN
SMB, 2 PIN
Reach Compliance Code
compliant
not_compliant
Factory Lead Time
40 Weeks
Breakdown Voltage-Max
34.4 V
34.4 V
Breakdown Voltage-Min
31.1 V
31.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
3 W
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
AEC-Q101
Rep Pk Reverse Voltage-Max
28 V
28 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
32.75 V
Clamping Voltage-Max
45.4 V
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare MASMBJ28A with alternatives
Compare SMBJ28AHM4G with alternatives