MASMBJ11AE3TR vs SMBJ11AM4G feature comparison

MASMBJ11AE3TR Microsemi Corporation

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SMBJ11AM4G Taiwan Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.5 V 13.5 V
Breakdown Voltage-Min 12.2 V 12.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 12.85 V
Clamping Voltage-Max 18.2 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

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